Part Details for IRFM240-JQR-B by TT Electronics Resistors
Overview of IRFM240-JQR-B by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFM240-JQR-B
IRFM240-JQR-B CAD Models
IRFM240-JQR-B Part Data Attributes
|
|
IRFM240-JQR-B
TT Electronics Resistors
Buy Now
Datasheet
|
Compare Parts:
IRFM240-JQR-B
TT Electronics Resistors
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFM240-JQR-B
This table gives cross-reference parts and alternative options found for IRFM240-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM240-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFM240PBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | IRFM240-JQR-B vs IRFM240PBF |
| IRFM240-QR-BR1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240-JQR-B vs IRFM240-QR-BR1 |
| 2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IRFM240-JQR-B vs 2N7219 |
| 2N7219R1 | 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Power and Hybrid / Semelab Limited | IRFM240-JQR-B vs 2N7219R1 |
| JANTX2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM240-JQR-B vs JANTX2N7219 |
| IRFM240 | 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Power and Hybrid / Semelab Limited | IRFM240-JQR-B vs IRFM240 |
| JANTXV2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM240-JQR-B vs JANTXV2N7219 |
| IRFM240-JQR-BR1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240-JQR-B vs IRFM240-JQR-BR1 |
| IRFM240 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | IRFM240-JQR-B vs IRFM240 |
| IRFM240R1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240-JQR-B vs IRFM240R1 |