Datasheets
IRFE330PBF by: International Rectifier

Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

Part Details for IRFE330PBF by International Rectifier

Overview of IRFE330PBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFE330PBF

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IRFE330PBF Part Data Attributes

IRFE330PBF International Rectifier
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IRFE330PBF International Rectifier Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code LCC
Package Description CHIP CARRIER, R-CQCC-N15
Pin Count 18
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 0.51 mJ
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
Number of Elements 1
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 22 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 65 ns

Alternate Parts for IRFE330PBF

This table gives cross-reference parts and alternative options found for IRFE330PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE330PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330PBF vs IRFE330
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330PBF vs IRFE330
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330PBF vs JANTXV2N6800U
IRFE330-JQR-BE4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330PBF vs IRFE330-JQR-BE4
IRFE330E4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330PBF vs IRFE330E4
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330PBF vs JANTXV2N6800U
IRFE330E4 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330PBF vs IRFE330E4
IRFE330-JQR-B 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330PBF vs IRFE330-JQR-B
Part Number Description Manufacturer Compare
JAN2N6800U Power Field-Effect Transistor, Defense Logistics Agency IRFE330PBF vs JAN2N6800U
IRFE330-JQR-BE4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330PBF vs IRFE330-JQR-BE4
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330PBF vs IRFE330
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330PBF vs IRFE330
IRFE330E4 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330PBF vs IRFE330E4
IRFE330 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330PBF vs IRFE330
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330PBF vs JANTXV2N6800U
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency IRFE330PBF vs JANTXV2N6800U
IRFE330-JQR-B 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330PBF vs IRFE330-JQR-B
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330PBF vs JANTXV2N6800U

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