Datasheets
IRFE330 by:

3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15

Part Details for IRFE330 by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFE330 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFE330

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IRFE330 Part Data Attributes

IRFE330 TT Electronics Power and Hybrid / Semelab Limited
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IRFE330 TT Electronics Power and Hybrid / Semelab Limited 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMELAB LTD
Package Description CHIP CARRIER, R-CQCC-N15
Pin Count 15
Reach Compliance Code compliant
ECCN Code EAR99
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CQCC-N15
Number of Terminals 15
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRFE330

This table gives cross-reference parts and alternative options found for IRFE330. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE330, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330 vs IRFE330
IRFE330PBF Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330 vs IRFE330PBF
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330 vs IRFE330
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330 vs JANTXV2N6800U
IRFE330-JQR-BE4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330 vs IRFE330-JQR-BE4
IRFE330E4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330 vs IRFE330E4
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330 vs JANTXV2N6800U
IRFE330E4 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330 vs IRFE330E4
IRFE330-JQR-B 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330 vs IRFE330-JQR-B
Part Number Description Manufacturer Compare
JAN2N6800U Power Field-Effect Transistor, Defense Logistics Agency IRFE330 vs JAN2N6800U
IRFE330PBF Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330 vs IRFE330PBF
IRFE330-JQR-BE4 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330 vs IRFE330-JQR-BE4
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330 vs IRFE330
IRFE330 Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 TT Electronics Resistors IRFE330 vs IRFE330
IRFE330E4 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330 vs IRFE330E4
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 International Rectifier IRFE330 vs JANTXV2N6800U
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency IRFE330 vs JANTXV2N6800U
IRFE330-JQR-B 3A, 400V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, LCC4-15 TT Electronics Power and Hybrid / Semelab Limited IRFE330 vs IRFE330-JQR-B
JANTXV2N6800U Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Infineon Technologies AG IRFE330 vs JANTXV2N6800U

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