Datasheets
IRFD110PBF by:

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4

Part Details for IRFD110PBF by Vishay Siliconix

Overview of IRFD110PBF by Vishay Siliconix

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Price & Stock for IRFD110PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFD110PBF-ND
DigiKey MOSFET N-CH 100V 1A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Tube 20438
In Stock
  • 1 $1.6200
  • 10 $1.3260
  • 100 $1.0315
  • 500 $0.8744
  • 1,000 $0.7123
  • 2,000 $0.6705
  • 5,000 $0.6386
  • 10,000 $0.6091
$0.6091 / $1.6200 Buy Now
DISTI # 70459443
RS 100V Single N-Channel HEXFET | Siliconix / Vishay IRFD110PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.9300
  • 25,000 $0.8800
  • 125,000 $0.8300
  • 250,000 $0.7900
$0.7900 / $0.9300 RFQ
Bristol Electronics   26
RFQ
Bristol Electronics   52
RFQ
New Advantage Corporation Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 5600
  • 200 $0.8643
  • 5,600 $0.8067
$0.8067 / $0.8643 Buy Now

Part Details for IRFD110PBF

IRFD110PBF CAD Models

IRFD110PBF Part Data Attributes

IRFD110PBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFD110PBF Vishay Siliconix Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code DIP
Package Description ROHS COMPLIANT, HEXDIP-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD110PBF

This table gives cross-reference parts and alternative options found for IRFD110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD110PBF Power Field-Effect Transistor, Vishay Intertechnologies IRFD110PBF vs IRFD110PBF
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 Fairchild Semiconductor Corporation IRFD110PBF vs IRFD110
IRFD110 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD110PBF vs IRFD110
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 Vishay Intertechnologies IRFD110PBF vs IRFD110
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, HEXDIP-4 Vishay Siliconix IRFD110PBF vs IRFD110
Part Number Description Manufacturer Compare
IRFD110PBF Power Field-Effect Transistor, Vishay Intertechnologies IRFD110PBF vs IRFD110PBF
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 Fairchild Semiconductor Corporation IRFD110PBF vs IRFD110
IRFD110 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD110PBF vs IRFD110
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 Vishay Intertechnologies IRFD110PBF vs IRFD110
IRFD110 Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 International Rectifier IRFD110PBF vs IRFD110

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