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Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD110PBF-ND
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DigiKey | MOSFET N-CH 100V 1A 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Tube |
20438 In Stock |
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$0.6091 / $1.6200 | Buy Now |
DISTI #
70459443
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RS | 100V Single N-Channel HEXFET | Siliconix / Vishay IRFD110PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.7900 / $0.9300 | RFQ |
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Bristol Electronics | 26 |
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RFQ | ||
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Bristol Electronics | 52 |
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RFQ | ||
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New Advantage Corporation | Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 5600 |
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$0.8067 / $0.8643 | Buy Now |
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IRFD110PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFD110PBF
Vishay Siliconix
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HEXDIP-4
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | DIP | |
Package Description | ROHS COMPLIANT, HEXDIP-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFD110PBF | Power Field-Effect Transistor, | Vishay Intertechnologies | IRFD110PBF vs IRFD110PBF |
IRFD110 | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 | Fairchild Semiconductor Corporation | IRFD110PBF vs IRFD110 |
IRFD110 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Motorola Mobility LLC | IRFD110PBF vs IRFD110 |
IRFD110 | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4 | Vishay Intertechnologies | IRFD110PBF vs IRFD110 |
IRFD110 | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, HEXDIP-4 | Vishay Siliconix | IRFD110PBF vs IRFD110 |