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Part Details for IRFD110 by Vishay Intertechnologies
Overview of IRFD110 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFD110
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD110
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Avnet Americas | Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP - Bulk (Alt: IRFD110) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Bulk | 0 |
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RFQ | |
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DISTI #
IRFD110
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Avnet Americas | Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP - Bulk (Alt: IRFD110) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Bulk | 0 |
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RFQ | |
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Bristol Electronics | 559 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 184 |
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$0.9760 / $2.4400 | Buy Now |
Part Details for IRFD110
IRFD110 CAD Models
IRFD110 Part Data Attributes
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IRFD110
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD110
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | DIP | |
| Package Description | HD-1, DIP-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFD110
This table gives cross-reference parts and alternative options found for IRFD110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFD110PBF | Power Field-Effect Transistor, | Vishay Intertechnologies | IRFD110 vs IRFD110PBF |
| IRFD110 | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HEXDIP-4 | Fairchild Semiconductor Corporation | IRFD110 vs IRFD110 |
| IRFD110 | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Motorola Mobility LLC | IRFD110 vs IRFD110 |
| IRFD110 | Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-250AA, HEXDIP-4 | Vishay Siliconix | IRFD110 vs IRFD110 |