Datasheets
IRF9Z34NSTRRPBF by:

Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF9Z34NSTRRPBF by International Rectifier

Overview of IRF9Z34NSTRRPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF9Z34NSTRRPBF

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IRF9Z34NSTRRPBF Part Data Attributes

IRF9Z34NSTRRPBF International Rectifier
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IRF9Z34NSTRRPBF International Rectifier Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9Z34NSTRRPBF

This table gives cross-reference parts and alternative options found for IRF9Z34NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9Z34NSTRR International Rectifier Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSTRR
IRF9Z34NSTRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSTRRPBF
IRF9Z34NSTRLPBF Infineon Technologies AG $0.7033 Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSTRLPBF
IRF9Z34NSPBF International Rectifier Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSPBF
IRF9Z34NSTRL International Rectifier Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSTRL
IRF9Z34NSPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSPBF
IRF9Z34NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NSTRLPBF
Part Number Manufacturer Composite Price Description Compare
IRF9Z34NS International Rectifier Check for Price Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF9Z34NSTRRPBF vs IRF9Z34NS
HUF75329D3S Intersil Corporation Check for Price 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA IRF9Z34NSTRRPBF vs HUF75329D3S
HUF76413D3ST Intersil Corporation Check for Price 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA IRF9Z34NSTRRPBF vs HUF76413D3ST
HUF75329D3S_NL Rochester Electronics LLC Check for Price 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA IRF9Z34NSTRRPBF vs HUF75329D3S_NL
HUF76419D3 Intersil Corporation Check for Price 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA IRF9Z34NSTRRPBF vs HUF76419D3
IRF9Z34S International Rectifier Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF9Z34NSTRRPBF vs IRF9Z34S
IRFR1205PBF International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRF9Z34NSTRRPBF vs IRFR1205PBF
HUFA76409D3ST Rochester Electronics LLC Check for Price 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA IRF9Z34NSTRRPBF vs HUFA76409D3ST
MTD3055EL1 Motorola Mobility LLC Check for Price 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 IRF9Z34NSTRRPBF vs MTD3055EL1
HUFA76413D3ST Intersil Corporation Check for Price 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA IRF9Z34NSTRRPBF vs HUFA76413D3ST

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