IRF740
Description: 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Overview of IRF740 by Rochester Electronics LLC

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Part Data Attributes for IRF740 by Rochester Electronics LLC

IRF740
Rochester Electronics LLC
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.55 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
COMMERCIAL
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF740
    Rochester Electronics LLC
    10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    VS

Alternate Parts for IRF740

This table gives cross-reference parts and alternative options found for IRF740. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF740, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MTP10N40E 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF740 vs MTP10N40E
IRF740-009 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF740 vs IRF740-009
IRF740 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF740 vs IRF740
IRF740-001 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF740 vs IRF740-001
IRF740 Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF740 vs IRF740
BUZ61A Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF740 vs BUZ61A
IRF740PBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF740 vs IRF740PBF
IRF740LCPBF Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF740 vs IRF740LCPBF
RFP7N35 7A, 350V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF740 vs RFP7N35
IRF741 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF740 vs IRF741
Part Number Description Manufacturer Compare
IRF743 Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF740 vs IRF743
MTP10N35 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF740 vs MTP10N35
IRF743 TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF740 vs IRF743
IRF741 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF740 vs IRF741
IRF742 Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF740 vs IRF742
IRF742 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,8A I(D),TO-220AB Intersil Corporation IRF740 vs IRF742
IRF742 8.3A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRF740 vs IRF742
IRF741-001 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF740 vs IRF741-001
IRF743 Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF740 vs IRF743
IRF741 TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB Intersil Corporation IRF740 vs IRF741

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