Part Details for IRF7104TRPBF by International Rectifier
Overview of IRF7104TRPBF by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7104TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 9 | 2950 |
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$0.1462 / $0.5625 | Buy Now |
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Bristol Electronics | 3627 |
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RFQ | ||
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Bristol Electronics | 2963 |
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RFQ | ||
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Quest Components | 2.3 A, 20 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 2360 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | 2.3 A, 20 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 1487 |
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$0.3200 / $0.8000 | Buy Now |
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Quest Components | 2.3 A, 20 V, 0.25 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 844 |
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$0.4500 / $1.1250 | Buy Now |
Part Details for IRF7104TRPBF
IRF7104TRPBF CAD Models
IRF7104TRPBF Part Data Attributes
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IRF7104TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7104TRPBF
International Rectifier
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.3 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 2 W | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7104TRPBF
This table gives cross-reference parts and alternative options found for IRF7104TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7104TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7104 | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7104TRPBF vs IRF7104 |
IRF7104PBF | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7104TRPBF vs IRF7104PBF |
IRF7104PBF | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7104TRPBF vs IRF7104PBF |
IRF7104TR | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7104TRPBF vs IRF7104TR |
IRF7104TRPBF | Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7104TRPBF vs IRF7104TRPBF |