Datasheets
IRF7506TRPBF by:

Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Part Details for IRF7506TRPBF by Infineon Technologies AG

Overview of IRF7506TRPBF by Infineon Technologies AG

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Price & Stock for IRF7506TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 39M3575
Newark Dual P Channel Mosfet, -30V, Micro8, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:1.7A Rohs Compliant: Yes |Infineon IRF7506TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 70018928
RS IRF7506TRPBF Dual P-channel MOSFET Transistor, 1.7 A, 30 V, 8-Pin MSOP | Infineon IRF7506TRPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $0.3630
  • 5 $0.3450
  • 10 $0.3270
  • 100 $0.3090
  • 250 $0.2900
$0.2900 / $0.3630 RFQ
Rochester Electronics IRF7506 - 30V Dual P-Channel HEXFET Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 33
  • 1 $0.2625
  • 25 $0.2573
  • 100 $0.2468
  • 500 $0.2363
  • 1,000 $0.2231
$0.2231 / $0.2625 Buy Now
DISTI # IRF7506TRPBF
TME Transistor: P-MOSFET x2, unipolar, -30V, -1.7A, 1.25W, SO8 Min Qty: 4000 0
  • 4,000 $0.2240
$0.2240 RFQ
South Electronics IRF7506TRPBF 0
RFQ

Part Details for IRF7506TRPBF

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IRF7506TRPBF Part Data Attributes

IRF7506TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7506TRPBF Infineon Technologies AG Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 9.6 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7506TRPBF

This table gives cross-reference parts and alternative options found for IRF7506TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7506TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TRPBF vs IRF7506TR
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TRPBF vs IRF7506TRPBF
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TRPBF vs IRF7506TR
Part Number Description Manufacturer Compare
IRF9953PBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7506TRPBF vs IRF9953PBF
IRF7104TRPBF Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7506TRPBF vs IRF7104TRPBF
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TRPBF vs IRF7506TR
IRF7504TRPBF Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TRPBF vs IRF7504TRPBF
IRF9953TRPBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7506TRPBF vs IRF9953TRPBF
IRF9953 Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TRPBF vs IRF9953
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TRPBF vs IRF7506TRPBF
IRF9953TR Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TRPBF vs IRF9953TR
IRF7104TR Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TRPBF vs IRF7104TR
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TRPBF vs IRF7506TR

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