Part Details for IRF7102 by International Rectifier
Overview of IRF7102 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF7102
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 89 |
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$1.1250 / $1.8750 | Buy Now |
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Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 20 |
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$1.7500 / $2.8000 | Buy Now |
Part Details for IRF7102
IRF7102 CAD Models
IRF7102 Part Data Attributes
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IRF7102
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7102
International Rectifier
Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7102
This table gives cross-reference parts and alternative options found for IRF7102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDS9945X | 3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Texas Instruments | IRF7102 vs NDS9945X |
| RF1K49154 | Power Field-Effect Transistor, 2A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | IRF7102 vs RF1K49154 |
| NDS9955S62Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | IRF7102 vs NDS9955S62Z |
| NDS9955L99Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | IRF7102 vs NDS9955L99Z |
| NDS9955L86Z | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | IRF7102 vs NDS9955L86Z |
| RF1K4915496 | Power Field-Effect Transistor, 2A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Harris Semiconductor | IRF7102 vs RF1K4915496 |
| IRF7103UTRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7102 vs IRF7103UTRPBF |
| NDS9959 | Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7102 vs NDS9959 |
| NDS9959_NL | Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7102 vs NDS9959_NL |
| IRF7103TRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, | Infineon Technologies AG | IRF7102 vs IRF7103TRPBF |