Datasheets
IRF613 by:

TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB

Part Details for IRF613 by Texas Instruments

Overview of IRF613 by Texas Instruments

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Part Details for IRF613

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IRF613 Part Data Attributes

IRF613 Texas Instruments
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IRF613 Texas Instruments TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 2.6 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF613

This table gives cross-reference parts and alternative options found for IRF613. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF613, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF612 2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF613 vs IRF612
IRF611 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB National Semiconductor Corporation IRF613 vs IRF611
RFP2N12 Power Field-Effect Transistor, 2A I(D), 120V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF613 vs RFP2N12
IRF612 Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF613 vs IRF612
IRF613 TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB National Semiconductor Corporation IRF613 vs IRF613
IRF611-009 Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF613 vs IRF611-009
IRF611 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET FCI Semiconductor IRF613 vs IRF611
IRF613 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF613 vs IRF613
IRF613PBF 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF613 vs IRF613PBF
IRF612 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET FCI Semiconductor IRF613 vs IRF612
Part Number Description Manufacturer Compare
IRF611 3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF613 vs IRF611
RFP2N15 2A, 150V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF613 vs RFP2N15
IRF613 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF613 vs IRF613
IRF611-001 Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF613 vs IRF611-001
IRF611PBF Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF613 vs IRF611PBF
STP4N20 4A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF613 vs STP4N20
IRF613 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF613 vs IRF613
IRF613 Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF613 vs IRF613
IRF612 2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF613 vs IRF612
IRF611PBF 3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG IRF613 vs IRF611PBF

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