Part Details for IRF540 by Semiconductor Technology Inc
Overview of IRF540 by Semiconductor Technology Inc
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Part Details for IRF540
IRF540 CAD Models
IRF540 Part Data Attributes
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IRF540
Semiconductor Technology Inc
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Datasheet
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IRF540
Semiconductor Technology Inc
Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | SEMICONDUCTOR TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 27 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 108 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |