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Transistors Power Field-Effect Transistors IRF323

IRF323
Description: TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-204AA

Overview of IRF323 by Intersil Corporation

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Part Data Attributes for IRF323 by Intersil Corporation
Parametric Data

IRF323
Intersil Corporation
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
2.8 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
50 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. IRF323
    Intersil Corporation
    TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-204AA
    VS

Alternate Parts for IRF323

This table gives cross-reference parts and alternative options found for IRF323. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF323, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF323 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF323 vs IRF323
IRF323 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF323 vs IRF323
IRF323 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET FCI Semiconductor IRF323 vs IRF323
IRF323 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Samsung Semiconductor IRF323 vs IRF323
IRF323 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics IRF323 vs IRF323
Part Number Description Manufacturer Compare
IRF333R Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF323 vs IRF333R
2N6759 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF323 vs 2N6759
2N6759R1 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF323 vs 2N6759R1
UFN323 Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF323 vs UFN323
2N6759 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF323 vs 2N6759
2N6759 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF323 vs 2N6759
2N6759R1 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF323 vs 2N6759R1
MTM5N35 5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF323 vs MTM5N35
VN2450N8-G 0.25A, 500V, 13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA Microchip Technology Inc IRF323 vs VN2450N8-G
IRF333 TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,4.5A I(D),TO-3 Intersil Corporation IRF323 vs IRF333

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