| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $0.5667 / $0.7834 |
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| General Electric Solid State | Transistor |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| New Jersey Semiconductor Products Inc | Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 |
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| Harris Semiconductor | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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| Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Intersil Corporation | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-204AA |
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| FCI Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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