Datasheets
IRF1405STRR by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Part Details for IRF1405STRR by International Rectifier

Overview of IRF1405STRR by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF1405STRR

Part # Distributor Description Stock Price Buy
Quest Components   240
  • 1 $33.4206
  • 71 $26.7365
  • 188 $25.9010
$25.9010 / $33.4206 Buy Now

Part Details for IRF1405STRR

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IRF1405STRR Part Data Attributes:

IRF1405STRR International Rectifier
Buy Now Datasheet
Compare Parts:
IRF1405STRR International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 590 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 680 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1405STRR

This table gives cross-reference parts and alternative options found for IRF1405STRR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405STRR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1405STRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405STRR vs IRF1405STRRPBF
IRF1405STRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1405STRR vs IRF1405STRL
IRF1405STRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405STRR vs IRF1405STRLPBF
IRF1405S Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405STRR vs IRF1405S
IRF1405STRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405STRR vs IRF1405STRLPBF
Part Number Description Manufacturer Compare
FQP4N90 4.2A, 900V, 3.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF1405STRR vs FQP4N90
HUF76629D3S 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRF1405STRR vs HUF76629D3S
SSH7N80A Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRF1405STRR vs SSH7N80A
FQA8N80 8.4A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN Rochester Electronics LLC IRF1405STRR vs FQA8N80
SSH4N90AS Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRF1405STRR vs SSH4N90AS
2SK2926(L) Power Field-Effect Transistor, 0.11ohm, N-Channel, Metal-oxide Semiconductor FET, DPAK-3 Hitachi Ltd IRF1405STRR vs 2SK2926(L)
FQP9N08 9.3A, 80V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF1405STRR vs FQP9N08
PHB63NQ03LT,118 PHB63NQ03LT NXP Semiconductors IRF1405STRR vs PHB63NQ03LT,118
FDP55N06 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF1405STRR vs FDP55N06
FQP4N60 4.4A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF1405STRR vs FQP4N60

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