Datasheets
IRF1405STRLPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF1405STRLPBF by Infineon Technologies AG

Overview of IRF1405STRLPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF1405STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 13AC9172
Newark Mosfet, N-Ch, 55V, 131A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:131A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRF1405STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 5083
  • 1 $2.7600
  • 10 $2.4200
  • 25 $2.2800
  • 50 $2.1400
$2.1400 / $2.7600 Buy Now
DISTI # 86AK5349
Newark Mosfet, N-Ch, 55V, 131A, To-263Ab Rohs Compliant: Yes |Infineon IRF1405STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 800 $1.6200
  • 1,600 $1.5000
  • 3,200 $1.4400
  • 4,800 $1.4200
  • 8,000 $1.3900
$1.3900 / $1.6200 Buy Now
DISTI # IRF1405STRLPBFCT-ND
DigiKey MOSFET N-CH 55V 131A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2685
In Stock
  • 1 $2.6200
  • 10 $2.1720
  • 100 $1.7288
  • 800 $1.4628
  • 1,600 $1.2412
  • 2,400 $1.1791
  • 5,600 $1.1348
$1.1348 / $2.6200 Buy Now
DISTI # IRF1405STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1405STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 34400
  • 800 $1.2435
  • 1,600 $1.2070
  • 3,200 $1.1704
  • 4,800 $1.1338
  • 6,400 $1.0973
  • 8,000 $1.0607
  • 80,000 $1.0241
$1.0241 / $1.2435 Buy Now
DISTI # 942-IRF1405STRLPBF
Mouser Electronics MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS: Compliant 14327
  • 1 $2.0200
  • 10 $1.7500
  • 100 $1.4700
  • 250 $1.3100
  • 800 $1.0900
  • 4,800 $1.0700
$1.0700 / $2.0200 Buy Now
DISTI # 70017651
RS Power MOSFET, N-Ch, VDSS 55V, RDS(ON) 4.6 Milliohms, ID 131A, D2Pak, PD 200W, VGS+/-20V | Infineon IRF1405STRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $2.4600
  • 50 $2.3400
  • 250 $2.2100
  • 500 $2.0900
$2.0900 / $2.4600 RFQ
Future Electronics Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 4000
Reel
  • 800 $1.1200
  • 1,600 $1.1100
  • 2,400 $1.1000
  • 3,200 $1.0900
  • 4,000 $1.0700
$1.0700 / $1.1200 Buy Now
Future Electronics Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $0.6750
  • 1,600 $0.6600
  • 2,400 $0.6500
  • 3,200 $0.6450
  • 4,000 $0.6250
$0.6250 / $0.6750 Buy Now
Ameya Holding Limited   Min Qty: 800 745
  • 800 $1.6905
$1.6905 Buy Now
DISTI # TMOSP11712
Rutronik N-CH 55V 131A 4,6mOhm D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel Stock DE - 1600
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 800 $1.2800
  • 1,600 $1.2100
  • 2,400 $1.1400
  • 3,200 $1.0271
  • 4,800 $0.9904
$0.9904 / $1.2800 Buy Now
DISTI # SP001571200
EBV Elektronik Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001571200) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 55 V 5.3 mOhm 260 nC HEXFET� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 800 4800
  • 800 $1.4600
  • 4,800 $1.3600
$1.3600 / $1.4600 Buy Now

Part Details for IRF1405STRLPBF

IRF1405STRLPBF Part Data Attributes:

IRF1405STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1405STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 590 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 680 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1405STRLPBF

This table gives cross-reference parts and alternative options found for IRF1405STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1405STRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405STRLPBF vs IRF1405STRRPBF
IRF1405STRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1405STRLPBF vs IRF1405STRL
IRF1405S Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405STRLPBF vs IRF1405S
IRF1405STRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1405STRLPBF vs IRF1405STRR
IRF1405STRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405STRLPBF vs IRF1405STRLPBF
Part Number Description Manufacturer Compare
IRF1405S Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405STRLPBF vs IRF1405S
IRF1405STRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1405STRLPBF vs IRF1405STRL

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