Part Details for IRF122 by Samsung Semiconductor
Overview of IRF122 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF122
IRF122 CAD Models
IRF122 Part Data Attributes
|
IRF122
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRF122
Samsung Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 7 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF122
This table gives cross-reference parts and alternative options found for IRF122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF131 | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF122 vs IRF131 |
IRF132 | 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | IRF122 vs IRF132 |
2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | IRF122 vs 2N6756 |
IRF143 | 24A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF122 vs IRF143 |
JANTXV2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | IRF122 vs JANTXV2N6758 |
JAN2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | Defense Logistics Agency | IRF122 vs JAN2N6756 |
MTM20N10 | Power Field-Effect Transistor, 20A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | IRF122 vs MTM20N10 |
IRF141 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF122 vs IRF141 |
IRF130 | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | IRF122 vs IRF130 |
IRF120PBF | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF122 vs IRF120PBF |