JAN2N6756
Description: Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN

Overview of JAN2N6756 by Defense Logistics Agency

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Where used in Applications: Industrial Automation Motor control systems

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Part Data Attributes for JAN2N6756 by Defense Logistics Agency

JAN2N6756
Defense Logistics Agency
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
Package Description
TO-3, 2 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
14 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Qualified
Reference Standard
MIL-19500/542G
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JAN2N6756
    Defense Logistics Agency
    Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
    VS

Alternate Parts for JAN2N6756

This table gives cross-reference parts and alternative options found for JAN2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, FORMERLY TO-3, 2 PIN Defense Logistics Agency JAN2N6756 vs JANTXV2N6756
JANTX2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency JAN2N6756 vs JANTX2N6756
Part Number Description Manufacturer Compare
IRF131 Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JAN2N6756 vs IRF131
IRF132 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation JAN2N6756 vs IRF132
2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6756 vs 2N6756
IRF143 24A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JAN2N6756 vs IRF143
JANTXV2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JAN2N6756 vs JANTXV2N6758
MTM20N10 Power Field-Effect Transistor, 20A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JAN2N6756 vs MTM20N10
IRF141 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JAN2N6756 vs IRF141
IRF130 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation JAN2N6756 vs IRF130
IRF120PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JAN2N6756 vs IRF120PBF
IRF132R Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JAN2N6756 vs IRF132R

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