Transistors
IPB029N06N3GE8187ATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Overview of IPB029N06N3GE8187ATMA1 by Infineon Technologies AG

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Price & Stock for IPB029N06N3GE8187ATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 448-IPB029N06N3GE8187ATMA1CT-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.6800
  • 10 $1.8330
  • 100 $1.3230
  • 500 $1.0979
  • 1,000 $1.0579
$1.0579 / $2.6800 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 1,000 $1.0800
  • 2,000 $1.0600
  • 3,000 $1.0500
  • 4,000 $1.0400
$1.0400 / $1.0800 Buy Now
Future Electronics OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 1,000 $1.0800
  • 2,000 $1.0600
  • 3,000 $1.0500
  • 4,000 $1.0400
$1.0400 / $1.0800 Buy Now
Rochester Electronics XPB029N06 - Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 83
  • 1 $1.2300
  • 25 $1.2100
  • 100 $1.1600
  • 500 $1.1100
  • 1,000 $1.0500
$1.0500 / $1.2300 Buy Now

CAD Models for IPB029N06N3GE8187ATMA1 by Infineon Technologies AG
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Part Data Attributes for IPB029N06N3GE8187ATMA1 by Infineon Technologies AG

IPB029N06N3GE8187ATMA1
Infineon Technologies AG
-
-
Pbfree Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
GREEN, PLASTIC, TO-263, D2PAK-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
20 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
235 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.0032 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
480 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPB029N06N3GE8187ATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
    VS

Alternate Parts for IPB029N06N3GE8187ATMA1

This table gives cross-reference parts and alternative options found for IPB029N06N3GE8187ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB029N06N3GE8187ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPB029N06N3G Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB029N06N3GE8187ATMA1 vs IPB029N06N3G
IPI120N06S403AKSA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB029N06N3GE8187ATMA1 vs IPI120N06S403AKSA1
IPI120N06S403AKSA2 Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPB029N06N3GE8187ATMA1 vs IPI120N06S403AKSA2
IPB029N06N3GATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB029N06N3GE8187ATMA1 vs IPB029N06N3GATMA1

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