IPB029N06N3GE8187ATMA1
vs
IPB029N06N3G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
GREEN, PLASTIC, TO-263, D2PAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
20 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
235 mJ
|
235 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
120 A
|
120 A
|
Drain-source On Resistance-Max |
0.0032 Ω
|
0.0032 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
480 A
|
480 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Rohs Code |
|
Yes
|
Part Package Code |
|
D2PAK
|
Pin Count |
|
4
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
245
|
Power Dissipation-Max (Abs) |
|
188 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IPB029N06N3GE8187ATMA1 with alternatives
Compare IPB029N06N3G with alternatives