Part Details for IDSH1G-04A1F1C-08D by Qimonda AG
Overview of IDSH1G-04A1F1C-08D by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Part Details for IDSH1G-04A1F1C-08D
IDSH1G-04A1F1C-08D CAD Models
IDSH1G-04A1F1C-08D Part Data Attributes
|
|
IDSH1G-04A1F1C-08D
Qimonda AG
Buy Now
Datasheet
|
Compare Parts:
IDSH1G-04A1F1C-08D
Qimonda AG
DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | BGA | |
| Package Description | FBGA, BGA96,9X16,32 | |
| Pin Count | 96 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 20 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B96 | |
| Length | 13.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 96 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8.5 mm |
Alternate Parts for IDSH1G-04A1F1C-08D
This table gives cross-reference parts and alternative options found for IDSH1G-04A1F1C-08D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IDSH1G-04A1F1C-08D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDJ1116BABG-AC-E | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | IDSH1G-04A1F1C-08D vs EDJ1116BABG-AC-E |
| IS46TR16640A-187FBLA1 | DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96 | Integrated Silicon Solution Inc | IDSH1G-04A1F1C-08D vs IS46TR16640A-187FBLA1 |
| H5TQ1G63BFR-G7C | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, HALOGEN FREE & ROHS COMPLIANT, FPBGA-96 | SK Hynix Inc | IDSH1G-04A1F1C-08D vs H5TQ1G63BFR-G7C |
| MT41K64M16JT-15E:F | DDR DRAM, 64MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | IDSH1G-04A1F1C-08D vs MT41K64M16JT-15E:F |
| EDJ1116BABG-8C-E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | IDSH1G-04A1F1C-08D vs EDJ1116BABG-8C-E |
| H5TQ1G63AFPR-G7C | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE, FPBGA-96 | SK Hynix Inc | IDSH1G-04A1F1C-08D vs H5TQ1G63AFPR-G7C |
| EDJ1116BASE-8A-E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | IDSH1G-04A1F1C-08D vs EDJ1116BASE-8A-E |
| K4B1G1646G-BCH90 | DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | IDSH1G-04A1F1C-08D vs K4B1G1646G-BCH90 |
| NT5CC64M16DP-CF | DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 | Nanya Technology Corporation | IDSH1G-04A1F1C-08D vs NT5CC64M16DP-CF |
| IS46TR16640A-187FBLA2 | DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96 | Integrated Silicon Solution Inc | IDSH1G-04A1F1C-08D vs IS46TR16640A-187FBLA2 |