Part Details for HYS64T64020HU-25F-A by Qimonda AG
Overview of HYS64T64020HU-25F-A by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 74AC11086D | Texas Instruments | Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 | |
| 74AC11244DW | Texas Instruments | Octal Buffers/Drivers 24-SOIC -40 to 85 | |
| 74AC11245DW | Texas Instruments | Octal Bus Transceivers 24-SOIC -40 to 85 |
Part Details for HYS64T64020HU-25F-A
HYS64T64020HU-25F-A CAD Models
HYS64T64020HU-25F-A Part Data Attributes
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HYS64T64020HU-25F-A
Qimonda AG
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Datasheet
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HYS64T64020HU-25F-A
Qimonda AG
DDR DRAM Module, 64MX64, 0.4ns, CMOS, GREEN, DIMM-240
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM240,40 | |
| Pin Count | 240 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N240 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 240 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM240,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.08 A | |
| Supply Current-Max | 1.36 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for HYS64T64020HU-25F-A
This table gives cross-reference parts and alternative options found for HYS64T64020HU-25F-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYS64T64020HU-25F-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M378T6464DZ3-CF7 | DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6464DZ3-CF7 |
| M378T6553BZ0-CE6 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, LEAD FREE, DIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6553BZ0-CE6 |
| M378T6453FG0-LE6 | DDR DRAM Module, 64MX64, 0.45ns, CMOS, DIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6453FG0-LE6 |
| M2U51264TU88A0F-3C | DDR DRAM Module, 64MX64, 0.45ns, CMOS, DIMM-240 | Nanya Technology Corporation | HYS64T64020HU-25F-A vs M2U51264TU88A0F-3C |
| M1U51264TU88A0F-3C | DDR DRAM Module, 64MX64, 0.45ns, CMOS, DIMM-240 | Nanya Technology Corporation | HYS64T64020HU-25F-A vs M1U51264TU88A0F-3C |
| M378T6453FG0-CD5 | DDR DRAM Module, 64MX64, 0.5ns, CMOS, DIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6453FG0-CD5 |
| HYS64T64000GU-3.7-A | DDR DRAM Module, 64MX64, 0.5ns, CMOS, DIMM-240 | Infineon Technologies AG | HYS64T64020HU-25F-A vs HYS64T64000GU-3.7-A |
| HYS64T64000EU-2.5-B2 | DDR DRAM Module, 64MX64, 0.4ns, CMOS, GREEN, UDIMM-240 | Qimonda AG | HYS64T64020HU-25F-A vs HYS64T64000EU-2.5-B2 |
| M378T6553BG0-CCC | DDR DRAM Module, 64MX64, 0.6ns, CMOS, DIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6553BG0-CCC |
| M378T6464QZ3-CE7 | DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, UDIMM-240 | Samsung Semiconductor | HYS64T64020HU-25F-A vs M378T6464QZ3-CE7 |