Memory
HYMD512G726AL8M-M
SK Hynix Inc
Description: DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184

Overview of HYMD512G726AL8M-M by SK Hynix Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

Available Datasheets

Part # Manufacturer Description Datasheet
EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board
ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua
ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E

CAD Models for HYMD512G726AL8M-M by SK Hynix Inc
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Part Data Attributes for HYMD512G726AL8M-M by SK Hynix Inc

HYMD512G726AL8M-M
SK Hynix Inc
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
DIMM
Package Description
DIMM, DIMM184
Pin Count
184
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
Memory Density
9663676416 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
8192
Self Refresh
YES
Standby Current-Max
0.18 A
Supply Current-Max
6.84 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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  1. HYMD512G726AL8M-M
    SK Hynix Inc
    DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184
    VS

Alternate Parts for HYMD512G726AL8M-M

This table gives cross-reference parts and alternative options found for HYMD512G726AL8M-M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYMD512G726AL8M-M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYMD512G726L8-K DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G726L8-K
HYMD512G7268-K DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G7268-K
HYMD512G726A8M-K DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G726A8M-K
HYMD512G7268-M DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G7268-M
HYMD512G726AL8M-H DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G726AL8M-H
Part Number Description Manufacturer Compare
MT18VDDT12872AY-202XX DDR DRAM Module, 128MX72, 0.8ns, CMOS, MO-206, DIMM-184 Micron Technology Inc HYMD512G726AL8M-M vs MT18VDDT12872AY-202XX
HYMD512G726L4-L DDR DRAM Module, 128MX72, 0.8ns, CMOS, 5.250 X 1.700 X 0.150 INCH, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD512G726L4-L
MT36VDDT12872Y-265A1 DDR DRAM Module, 128MX72, 0.75ns, CMOS, MO-206, DIMM-184 Micron Technology Inc HYMD512G726AL8M-M vs MT36VDDT12872Y-265A1
W3EG72125S262AJD3M DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 Microsemi Corporation HYMD512G726AL8M-M vs W3EG72125S262AJD3M
W3EG72126S263AJD3SF DDR DRAM Module, 128MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 Microsemi Corporation HYMD512G726AL8M-M vs W3EG72126S263AJD3SF
M312L2923BUS-CA0 DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor HYMD512G726AL8M-M vs M312L2923BUS-CA0
W3EG128M72ETSU202AJD3 DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184 Microsemi Corporation HYMD512G726AL8M-M vs W3EG128M72ETSU202AJD3
HYMD525G726BSP4-L DDR DRAM Module, 128MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 SK Hynix Inc HYMD512G726AL8M-M vs HYMD525G726BSP4-L
M383L2920MT1-CA2 DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor HYMD512G726AL8M-M vs M383L2920MT1-CA2
MT36VDDF12872Y-40BXX DDR DRAM Module, 128MX72, 0.7ns, CMOS, LEAD FREE, DIMM-184 Micron Technology Inc HYMD512G726AL8M-M vs MT36VDDF12872Y-40BXX

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