Part Details for HYB39S256800DE-7.5 by Infineon Technologies AG
Overview of HYB39S256800DE-7.5 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for HYB39S256800DE-7.5
HYB39S256800DE-7.5 CAD Models
HYB39S256800DE-7.5 Part Data Attributes
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HYB39S256800DE-7.5
Infineon Technologies AG
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Datasheet
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HYB39S256800DE-7.5
Infineon Technologies AG
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for HYB39S256800DE-7.5
This table gives cross-reference parts and alternative options found for HYB39S256800DE-7.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S256800DE-7.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V56820AT-H | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HYB39S256800DE-7.5 vs HY57V56820AT-H |
| W982508AH-75 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | HYB39S256800DE-7.5 vs W982508AH-75 |
| V54C3256804VDUI7I | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HYB39S256800DE-7.5 vs V54C3256804VDUI7I |
| K4S560832B-TL75 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HYB39S256800DE-7.5 vs K4S560832B-TL75 |
| V54C3256804VHLI7PC | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HYB39S256800DE-7.5 vs V54C3256804VHLI7PC |
| V54C3256804VHUI7IPC | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HYB39S256800DE-7.5 vs V54C3256804VHUI7IPC |
| W982508AH-7 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | HYB39S256800DE-7.5 vs W982508AH-7 |
| MT48LC32M8A2TG-75AT:D | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | HYB39S256800DE-7.5 vs MT48LC32M8A2TG-75AT:D |
| TC59SM808CFTL-70 | IC 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | HYB39S256800DE-7.5 vs TC59SM808CFTL-70 |
| K4S560832E-UC750 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Samsung Semiconductor | HYB39S256800DE-7.5 vs K4S560832E-UC750 |