Part Details for H57V2582GTR-60J by SK Hynix Inc
Overview of H57V2582GTR-60J by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for H57V2582GTR-60J
H57V2582GTR-60J CAD Models
H57V2582GTR-60J Part Data Attributes
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H57V2582GTR-60J
SK Hynix Inc
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Datasheet
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H57V2582GTR-60J
SK Hynix Inc
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.194 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 10.16 mm |
Alternate Parts for H57V2582GTR-60J
This table gives cross-reference parts and alternative options found for H57V2582GTR-60J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H57V2582GTR-60J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V56820BT-H | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | H57V2582GTR-60J vs HY57V56820BT-H |
| K4S560832C-TI7C | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | H57V2582GTR-60J vs K4S560832C-TI7C |
| HYB39S256800CE-7.5 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | H57V2582GTR-60J vs HYB39S256800CE-7.5 |
| HY57V56820FLT-6I | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | H57V2582GTR-60J vs HY57V56820FLT-6I |
| K4S560832B-TL75 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | H57V2582GTR-60J vs K4S560832B-TL75 |
| V54C3256804VGLI-7PC | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSSOP2-54 | ProMOS Technologies Inc | H57V2582GTR-60J vs V54C3256804VGLI-7PC |
| IS42SM83200D-6TLI | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | Integrated Silicon Solution Inc | H57V2582GTR-60J vs IS42SM83200D-6TLI |
| TC59SM808BFTL-70 | IC 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | H57V2582GTR-60J vs TC59SM808BFTL-70 |
| HYB39S256800FT-7 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Qimonda AG | H57V2582GTR-60J vs HYB39S256800FT-7 |
| K4S560832E-UL750 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | Samsung Semiconductor | H57V2582GTR-60J vs K4S560832E-UL750 |