Part Details for HYB25D256800CTL-6 by Qimonda AG
Overview of HYB25D256800CTL-6 by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for HYB25D256800CTL-6
HYB25D256800CTL-6 CAD Models
HYB25D256800CTL-6 Part Data Attributes
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HYB25D256800CTL-6
Qimonda AG
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Datasheet
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HYB25D256800CTL-6
Qimonda AG
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | TSOP2 | |
| Package Description | TSSOP, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.215 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB25D256800CTL-6
This table gives cross-reference parts and alternative options found for HYB25D256800CTL-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D256800CTL-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB25D256800CE-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | HYB25D256800CTL-6 vs HYB25D256800CE-6 |
| HYB25D256800CTL-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYB25D256800CTL-6 vs HYB25D256800CTL-6 |
| HYB25D256800CE-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYB25D256800CTL-6 vs HYB25D256800CE-6 |
| HYB25D256800CT-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYB25D256800CTL-6 vs HYB25D256800CT-6 |
| HYB25D256800CEL-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | HYB25D256800CTL-6 vs HYB25D256800CEL-6 |