Memory
HYB25D256161CE-4
Infineon Technologies AG
Description: DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66

Overview of HYB25D256161CE-4 by Infineon Technologies AG

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Where used in Applications: Consumer Electronics Internet of Things (IoT) Computing and Data Storage

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Part Data Attributes for HYB25D256161CE-4 by Infineon Technologies AG

HYB25D256161CE-4
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TSOP2
Package Description
TSSOP, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
250 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e3
Length
22.22 mm
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
16777216 words
Number of Words Code
16000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSSOP
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.006 A
Supply Current-Max
0.315 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.5 V
Supply Voltage-Nom (Vsup)
2.6 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HYB25D256161CE-4
    Infineon Technologies AG
    DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66
    VS

Alternate Parts for HYB25D256161CE-4

This table gives cross-reference parts and alternative options found for HYB25D256161CE-4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D256161CE-4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYB25D256163CE-4 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG HYB25D256161CE-4 vs HYB25D256163CE-4
HYB25D256163CE-4 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Infineon Technologies AG HYB25D256161CE-4 vs HYB25D256163CE-4
Part Number Description Manufacturer Compare
HYB25DC256163CE-5 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG HYB25D256161CE-4 vs HYB25DC256163CE-5
K4D551638D-TC33 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-TC33
K4D551638D-LC360 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-LC360
HYB25D256163CE-4 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG HYB25D256161CE-4 vs HYB25D256163CE-4
K4D551638D-TC40 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-TC40
K4D551638F-TC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638F-TC400
K4D551638D-TC36 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-TC36
K4D551638D-LC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-LC400
K4D551638D-TC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-TC400
K4D551638D-TC360 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor HYB25D256161CE-4 vs K4D551638D-TC360

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