There are no models available for this part yet.
Overview of HYB18T512400AF-5 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 9 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Environmental Monitoring
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Electronic Manufacturing
Entertainment and Gaming
Price & Stock for HYB18T512400AF-5 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 30 |
|
RFQ | ||||
| Quest Components | SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA | 34 |
|
$8.8800 / $14.4000 | Buy Now |
CAD Models for HYB18T512400AF-5 by Infineon Technologies AG
Part Data Attributes for HYB18T512400AF-5 by Infineon Technologies AG
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
BGA
|
|
Package Description
|
TFBGA, BGA60,9X11,32
|
|
Pin Count
|
60
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.28
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
0.6 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
200 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
4,8
|
|
JESD-30 Code
|
R-PBGA-B60
|
|
JESD-609 Code
|
e1
|
|
Length
|
10.5 mm
|
|
Memory Density
|
536870912 bit
|
|
Memory IC Type
|
DDR2 DRAM
|
|
Memory Width
|
4
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
60
|
|
Number of Words
|
134217728 words
|
|
Number of Words Code
|
128000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
95 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
128MX4
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TFBGA
|
|
Package Equivalence Code
|
BGA60,9X11,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
4,8
|
|
Standby Current-Max
|
0.004 A
|
|
Supply Voltage-Max (Vsup)
|
1.9 V
|
|
Supply Voltage-Min (Vsup)
|
1.7 V
|
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
OTHER
|
|
Terminal Finish
|
TIN SILVER COPPER
|
|
Terminal Form
|
BALL
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
BOTTOM
|
|
Width
|
10 mm
|
Alternate Parts for HYB18T512400AF-5
This table gives cross-reference parts and alternative options found for HYB18T512400AF-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T512400AF-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V59C1512404QBF5 | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, M0-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QBF5 |
| K4T51043QC-ZCCCT | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | HYB18T512400AF-5 vs K4T51043QC-ZCCCT |
| V59C1512404QCLF5 | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QCLF5 |
| V59C1512404QBLF5 | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, M0-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QBLF5 |
| V59C1512404QBLF5I | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QBLF5I |
| HY5PS12421CFLP-E3 | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | HYB18T512400AF-5 vs HY5PS12421CFLP-E3 |
| V59C1512404QBF5I | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QBF5I |
| V59C1512404QCF5 | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | ProMOS Technologies Inc | HYB18T512400AF-5 vs V59C1512404QCF5 |
| NT5TU128M4BE-5A | DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, 0.80 MM PITCH, GREEN, BGA-60 | Nanya Technology Corporation | HYB18T512400AF-5 vs NT5TU128M4BE-5A |