Memory
HY5V52EM-H
SK Hynix Inc
Description: Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90

Overview of HY5V52EM-H by SK Hynix Inc

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Where used in Applications: Consumer Electronics

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Part Data Attributes for HY5V52EM-H by SK Hynix Inc

HY5V52EM-H
SK Hynix Inc
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
BGA
Package Description
TFBGA, BGA90,9X15,32
Pin Count
90
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e0
Length
13 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.28 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. HY5V52EM-H
    SK Hynix Inc
    Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90
    VS

Alternate Parts for HY5V52EM-H

This table gives cross-reference parts and alternative options found for HY5V52EM-H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5V52EM-H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
EDS2532AABH-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc HY5V52EM-H vs EDS2532AABH-75L-E
EDS2532AABJ-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc HY5V52EM-H vs EDS2532AABJ-75L-E
Part Number Description Manufacturer Compare
EDS2532EEBH-9A-E Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc HY5V52EM-H vs EDS2532EEBH-9A-E
K4S28323LE-HN600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4S28323LE-HN600
K4M56323LE-EE1L0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4M56323LE-EE1L0
K4M28323PH-HG750JR Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4M28323PH-HG750JR
EDS2532CABH-75L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc HY5V52EM-H vs EDS2532CABH-75L-E
IS42VM32800D-75BLI Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc HY5V52EM-H vs IS42VM32800D-75BLI
K4S56323LF-HL1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4S56323LF-HL1H0
K4M56323LE-ME800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4M56323LE-ME800
W9825G2DB-75I Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp HY5V52EM-H vs W9825G2DB-75I
K4S283233F-FN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor HY5V52EM-H vs K4S283233F-FN1H0

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