There are no models available for this part yet.
Overview of HY57V281620HDT-8 by SK Hynix Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Renewable Energy
Robotics and Drones
CAD Models for HY57V281620HDT-8 by SK Hynix Inc
Part Data Attributes for HY57V281620HDT-8 by SK Hynix Inc
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SK HYNIX INC
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2, TSOP54,.46,32
|
|
Pin Count
|
54
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
6 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
125 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
1,2,4,8
|
|
JESD-30 Code
|
R-PDSO-G54
|
|
JESD-609 Code
|
e0
|
|
Length
|
22.22 mm
|
|
Memory Density
|
134217728 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
54
|
|
Number of Words
|
8388608 words
|
|
Number of Words Code
|
8000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
8MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP54,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
4096
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
1,2,4,8,FP
|
|
Standby Current-Max
|
0.001 A
|
|
Supply Current-Max
|
0.2 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
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|
Width
|
10.16 mm
|
Alternate Parts for HY57V281620HDT-8
This table gives cross-reference parts and alternative options found for HY57V281620HDT-8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V281620HDT-8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB39S128160DE-8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | HY57V281620HDT-8 vs HYB39S128160DE-8 |
| V54C3128164VCUI10 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HY57V281620HDT-8 vs V54C3128164VCUI10 |
| HY57V281620ALT-SI | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V281620HDT-8 vs HY57V281620ALT-SI |
| HY57V281620ALT-8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V281620HDT-8 vs HY57V281620ALT-8 |
| TC59SM716AFTI-80 | IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | HY57V281620HDT-8 vs TC59SM716AFTI-80 |
| V54C3128164VCUI10E | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | HY57V281620HDT-8 vs V54C3128164VCUI10E |
| K4S281632D-TC1L0 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V281620HDT-8 vs K4S281632D-TC1L0 |
| MB81F121642-10LFN | 8MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | HY57V281620HDT-8 vs MB81F121642-10LFN |
| HY57V281620AT-SI | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V281620HDT-8 vs HY57V281620AT-SI |
| W9812G6DH-8H | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | HY57V281620HDT-8 vs W9812G6DH-8H |