Part Details for MB81F121642-10LFN by FUJITSU Semiconductor Limited
Overview of MB81F121642-10LFN by FUJITSU Semiconductor Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Part Details for MB81F121642-10LFN
MB81F121642-10LFN CAD Models
MB81F121642-10LFN Part Data Attributes
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MB81F121642-10LFN
FUJITSU Semiconductor Limited
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Datasheet
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MB81F121642-10LFN
FUJITSU Semiconductor Limited
8MX16 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81F121642-10LFN
This table gives cross-reference parts and alternative options found for MB81F121642-10LFN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F121642-10LFN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB39S128160DE-8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Infineon Technologies AG | MB81F121642-10LFN vs HYB39S128160DE-8 |
| V54C3128164VCUI10 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | MB81F121642-10LFN vs V54C3128164VCUI10 |
| HY57V281620ALT-SI | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | MB81F121642-10LFN vs HY57V281620ALT-SI |
| HY57V281620ALT-8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | MB81F121642-10LFN vs HY57V281620ALT-8 |
| TC59SM716AFTI-80 | IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | MB81F121642-10LFN vs TC59SM716AFTI-80 |
| V54C3128164VCUI10E | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | MB81F121642-10LFN vs V54C3128164VCUI10E |
| K4S281632D-TC1L0 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | MB81F121642-10LFN vs K4S281632D-TC1L0 |
| HY57V281620AT-SI | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | MB81F121642-10LFN vs HY57V281620AT-SI |
| W9812G6DH-8H | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | MB81F121642-10LFN vs W9812G6DH-8H |
| HYB39S128160CT-8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Qimonda AG | MB81F121642-10LFN vs HYB39S128160CT-8 |