Datasheets
HY51V65173HGLT-6E by: SK Hynix Inc

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for HY51V65173HGLT-6E by SK Hynix Inc

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Part Details for HY51V65173HGLT-6E

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HY51V65173HGLT-6E Part Data Attributes

HY51V65173HGLT-6E SK Hynix Inc
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HY51V65173HGLT-6E SK Hynix Inc EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH
JESD-30 Code R-PDSO-G50
JESD-609 Code e6
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -30 °C
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HY51V65173HGLT-6E

This table gives cross-reference parts and alternative options found for HY51V65173HGLT-6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY51V65173HGLT-6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB3166165BT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG HY51V65173HGLT-6E vs HYB3166165BT-60
K4E661612E-TC60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6E vs K4E661612E-TC60
TC5164165AFT-60 IC 4M X 16 EDO DRAM, 60 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50, Dynamic RAM Toshiba America Electronic Components HY51V65173HGLT-6E vs TC5164165AFT-60
KM416V4104CT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6E vs KM416V4104CT-6
HYB3166165BTL-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens HY51V65173HGLT-6E vs HYB3166165BTL-60
HYB3166165BT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Siemens HY51V65173HGLT-6E vs HYB3166165BT-60
KM416V4004CS-L6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6E vs KM416V4004CS-L6
TMS465169-60DGE 4MX16 EDO DRAM, 60ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Texas Instruments HY51V65173HGLT-6E vs TMS465169-60DGE
GM71VS65163CLT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6E vs GM71VS65163CLT-6
HY51V64164LTC-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6E vs HY51V64164LTC-60
Part Number Description Manufacturer Compare
HY51V65164TC-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6E vs HY51V65164TC-60
HYB3165160ATL-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Infineon Technologies AG HY51V65173HGLT-6E vs HYB3165160ATL-50
KM416V4104CT-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6E vs KM416V4104CT-L5
K4E641612C-TL500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY51V65173HGLT-6E vs K4E641612C-TL500
HM5164165LTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd HY51V65173HGLT-6E vs HM5164165LTT-6
HY51V64164SLRC-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6E vs HY51V64164SLRC-50
V53C364165AT60L EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation HY51V65173HGLT-6E vs V53C364165AT60L
HY51V65160SLRC-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50 SK Hynix Inc HY51V65173HGLT-6E vs HY51V65160SLRC-50
MT4LC4M16K2TG-6TR Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc HY51V65173HGLT-6E vs MT4LC4M16K2TG-6TR
MT4LC4M16F5TG-5S Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc HY51V65173HGLT-6E vs MT4LC4M16F5TG-5S

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