Datasheets
HUF76113DK8T by:

6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8

Part Details for HUF76113DK8T by Rochester Electronics LLC

Overview of HUF76113DK8T by Rochester Electronics LLC

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Part Details for HUF76113DK8T

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HUF76113DK8T Part Data Attributes

HUF76113DK8T Rochester Electronics LLC
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HUF76113DK8T Rochester Electronics LLC 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOIC
Package Description PLASTIC, SO-8
Pin Count 8
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76113DK8T

This table gives cross-reference parts and alternative options found for HUF76113DK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76113DK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76113DK8 Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation HUF76113DK8T vs HUF76113DK8
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor HUF76113DK8T vs HUF76113DK8T
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation HUF76113DK8T vs HUF76113DK8T
HUF76113DK8 Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor HUF76113DK8T vs HUF76113DK8
Part Number Description Manufacturer Compare
FY3ABJ-03 Power Field-Effect Transistor, 3A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric HUF76113DK8T vs FY3ABJ-03
FDS8947A 4A, 30V, 0.052ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SOIC-8 Rochester Electronics LLC HUF76113DK8T vs FDS8947A
NDS8936 5.3A, 30V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUF76113DK8T vs NDS8936
FDS6892AZ 7.5A, 20V, 0.018ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUF76113DK8T vs FDS6892AZ
FDS4953 5A, 30V, 0.055ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUF76113DK8T vs FDS4953
NDS8926 20V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments HUF76113DK8T vs NDS8926
NDS9947 3.5A, 20V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUF76113DK8T vs NDS9947
NTMD4N03R2G 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC HUF76113DK8T vs NTMD4N03R2G
HAT2027R Power Field-Effect Transistor, 7A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Hitachi Ltd HUF76113DK8T vs HAT2027R
HAT1038R Power Field-Effect Transistor, 3.5A I(D), 60V, 0.23ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 Hitachi Ltd HUF76113DK8T vs HAT1038R

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