Memory
HMT112S6AFP6C-S6
SK Hynix Inc
Description: DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204

Overview of HMT112S6AFP6C-S6 by SK Hynix Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for HMT112S6AFP6C-S6 by SK Hynix Inc

HMT112S6AFP6C-S6
SK Hynix Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
DMA
Package Description
DIMM, DIMM204,24
Pin Count
204
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
20 ns
Additional Feature
AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Clock Frequency-Max (fCLK)
400 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N240
Length
67.6 mm
Memory Density
1073741824 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
203
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
128MX8
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM204,24
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
30 mm
Self Refresh
YES
Standby Current-Max
0.08 A
Supply Current-Max
1.5 mA
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
NO LEAD
Terminal Pitch
0.6 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
20
Width
3.8 mm
Want to compare parts?
  1. HMT112S6AFP6C-S6
    SK Hynix Inc
    DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204
    VS

Alternate Parts for HMT112S6AFP6C-S6

This table gives cross-reference parts and alternative options found for HMT112S6AFP6C-S6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HMT112S6AFP6C-S6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HMT112S6AFR6C-S6 DDR DRAM Module, 128MX8, 20ns, CMOS, HALOGEN FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6AFR6C-S6
Part Number Description Manufacturer Compare
EBJ11UE6BASA-DJ-E DDR DRAM Module, 128MX64, 0.25ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-S6 vs EBJ11UE6BASA-DJ-E
HMT112S6AFP6C-H9 DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6AFP6C-H9
HMT112S6AFP6C-G8 DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6AFP6C-G8
HMT112S6BFR6C-H9 DDR DRAM, 128MX64, 20ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6BFR6C-H9
EBJ11UE6BASA-AE-E DDR DRAM Module, 128MX64, 0.3ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-S6 vs EBJ11UE6BASA-AE-E
HMT112S6AFR6C-G7 DDR DRAM Module, 128MX8, 20ns, CMOS, HALOGEN FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6AFR6C-G7
HMT112S6AFR6C-H9 DDR DRAM Module, 128MX8, 20ns, CMOS, HALOGEN FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-S6 vs HMT112S6AFR6C-H9
EBJ11UE6BASA-8C-E DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-S6 vs EBJ11UE6BASA-8C-E

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