Datasheets
HMT112S6AFP6C-H9 by: SK Hynix Inc

DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204

Part Details for HMT112S6AFP6C-H9 by SK Hynix Inc

Overview of HMT112S6AFP6C-H9 by SK Hynix Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for HMT112S6AFP6C-H9

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HMT112S6AFP6C-H9 Part Data Attributes

HMT112S6AFP6C-H9 SK Hynix Inc
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HMT112S6AFP6C-H9 SK Hynix Inc DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code DMA
Package Description DIMM, DIMM204,24
Pin Count 204
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode DUAL BANK PAGE BURST
Access Time-Max 20 ns
Additional Feature AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Clock Frequency-Max (fCLK) 667 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N240
Length 67.6 mm
Memory Density 1073741824 bit
Memory IC Type DDR DRAM MODULE
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 203
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 128MX8
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM204,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 30 mm
Self Refresh YES
Standby Current-Max 0.08 A
Supply Current-Max 2.02 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount NO
Technology CMOS
Temperature Grade OTHER
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20
Width 3.8 mm

Alternate Parts for HMT112S6AFP6C-H9

This table gives cross-reference parts and alternative options found for HMT112S6AFP6C-H9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HMT112S6AFP6C-H9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HMT112S6BFR6C-H9 DDR DRAM, 128MX64, 20ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6BFR6C-H9
Part Number Description Manufacturer Compare
HMT112S6AFP6C-S6 DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6AFP6C-S6
EBJ11UE6BASA-DJ-E DDR DRAM Module, 128MX64, 0.25ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-H9 vs EBJ11UE6BASA-DJ-E
HMT112S6AFP6C-G8 DDR DRAM Module, 128MX8, 20ns, CMOS, LEAD FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6AFP6C-G8
HMT112S6BFR6C-H9 DDR DRAM, 128MX64, 20ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6BFR6C-H9
EBJ11UE6BASA-AE-E DDR DRAM Module, 128MX64, 0.3ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-H9 vs EBJ11UE6BASA-AE-E
HMT112S6AFR6C-G7 DDR DRAM Module, 128MX8, 20ns, CMOS, HALOGEN FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6AFR6C-G7
HMT112S6AFR6C-H9 DDR DRAM Module, 128MX8, 20ns, CMOS, HALOGEN FREE, SODIMM-204 SK Hynix Inc HMT112S6AFP6C-H9 vs HMT112S6AFR6C-H9
EBJ11UE6BASA-8C-E DDR DRAM Module, 128MX64, 0.4ns, CMOS, ROHS COMPLIANT, SO-DIMM, 204 PIN Elpida Memory Inc HMT112S6AFP6C-H9 vs EBJ11UE6BASA-8C-E

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