Part Details for HGTG10N120BND_NL by Fairchild Semiconductor Corporation
Overview of HGTG10N120BND_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGTG10N120BND_NL
HGTG10N120BND_NL CAD Models
HGTG10N120BND_NL Part Data Attributes
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HGTG10N120BND_NL
Fairchild Semiconductor Corporation
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Datasheet
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HGTG10N120BND_NL
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 35 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 298 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 15 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for HGTG10N120BND_NL
This table gives cross-reference parts and alternative options found for HGTG10N120BND_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG10N120BND_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTG10N120BND_NL vs HGTG10N120BND |
| HGTG10N120BN | 35A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG10N120BND_NL vs HGTG10N120BN |
| HGTG10N120BND | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247, | Fairchild Semiconductor Corporation | HGTG10N120BND_NL vs HGTG10N120BND |
| HGTP10N120BN | 1200V, NPT IGBT, 800-TUBE | onsemi | HGTG10N120BND_NL vs HGTP10N120BN |