Part Details for HGT1S12N60C3DR by Harris Semiconductor
Overview of HGT1S12N60C3DR by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGT1S12N60C3DR
HGT1S12N60C3DR CAD Models
HGT1S12N60C3DR Part Data Attributes:
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HGT1S12N60C3DR
Harris Semiconductor
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Datasheet
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HGT1S12N60C3DR
Harris Semiconductor
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 24 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 400 ns | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 290 ns | |
Turn-on Time-Nom (ton) | 36 ns |
Alternate Parts for HGT1S12N60C3DR
This table gives cross-reference parts and alternative options found for HGT1S12N60C3DR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3DR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | HGT1S12N60C3DR vs APT35GN120SG |
IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HGT1S12N60C3DR vs IRGBC40U |
HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGT1S12N60C3DR vs HGTP12N60D1 |
HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGT1S12N60C3DR vs HGTG30N60C3 |
IRGBC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HGT1S12N60C3DR vs IRGBC40K |
HGT1S12N60B3 | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 | Harris Semiconductor | HGT1S12N60C3DR vs HGT1S12N60B3 |
SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | HGT1S12N60C3DR vs SGP13N60UF |
1MB20D-060 | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | HGT1S12N60C3DR vs 1MB20D-060 |
IRG4BC20UPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | HGT1S12N60C3DR vs IRG4BC20UPBF |
GT50J121 | TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGT1S12N60C3DR vs GT50J121 |