Memory
HB52E89EM-B6
Hitachi Ltd
Description: Synchronous DRAM Module, 8MX72, 6ns, CMOS, 133.37 X 4 MM, 34.925 MM HEIGHT, 1.27 MM PITCH, DIMM-168

Overview of HB52E89EM-B6 by Hitachi Ltd

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

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Part Data Attributes for HB52E89EM-B6 by Hitachi Ltd

HB52E89EM-B6
Hitachi Ltd
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HITACHI LTD
Part Package Code
DIMM
Package Description
DIMM, DIMM168
Pin Count
168
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
SINGLE BANK PAGE BURST
Access Time-Max
6 ns
Clock Frequency-Max (fCLK)
100 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N168
Memory Density
603979776 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
168
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
65 °C
Operating Temperature-Min
Organization
8MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM168
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
4096
Standby Current-Max
0.018 A
Supply Current-Max
1.305 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
Want to compare parts?
  1. HB52E89EM-B6
    Hitachi Ltd
    Synchronous DRAM Module, 8MX72, 6ns, CMOS, 133.37 X 4 MM, 34.925 MM HEIGHT, 1.27 MM PITCH, DIMM-168
    VS

Alternate Parts for HB52E89EM-B6

This table gives cross-reference parts and alternative options found for HB52E89EM-B6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB52E89EM-B6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HB52E89EM-A6D Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 Hitachi Ltd HB52E89EM-B6 vs HB52E89EM-A6D
HB52E89EM-B6D Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 Hitachi Ltd HB52E89EM-B6 vs HB52E89EM-B6D
Part Number Description Manufacturer Compare
MC-458CA726PFB-A10 Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 NEC Electronics Group HB52E89EM-B6 vs MC-458CA726PFB-A10
V43728S04VTG-12 Synchronous DRAM Module, 8MX72, 7ns, CMOS Mosel Vitelic Corporation HB52E89EM-B6 vs V43728S04VTG-12
SM572084074E61A Synchronous DRAM Module, 8MX72, CMOS, DIMM-168 SMART Modular Technology Inc HB52E89EM-B6 vs SM572084074E61A
HB56UW872E-6A EDO DRAM Module, 8MX72, 60ns, CMOS, DUAL LEAD OUT, SOCKET TYPE, DIMM-168 Hitachi Ltd HB52E89EM-B6 vs HB56UW872E-6A
MT5LSDT872AG-13EB1 Synchronous DRAM Module, 8MX72, 5.4ns, CMOS, DIMM-168 Micron Technology Inc HB52E89EM-B6 vs MT5LSDT872AG-13EB1
GMM2739233ETG-7K Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 SK Hynix Inc HB52E89EM-B6 vs GMM2739233ETG-7K
IBM11M8730CB-60J Fast Page DRAM Module, 8MX72, 60ns, CMOS, DIMM-168 IBM HB52E89EM-B6 vs IBM11M8730CB-60J
MT5LSDT872AY-13EB1 Synchronous DRAM Module, 8MX72, 5.4ns, CMOS, DIMM-168 Micron Technology Inc HB52E89EM-B6 vs MT5LSDT872AY-13EB1
MC-458CA726F-A80 Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 NEC Electronics Group HB52E89EM-B6 vs MC-458CA726F-A80
KMM372C883CK-6 Fast Page DRAM Module, 8MX72, 60ns, CMOS Samsung Semiconductor HB52E89EM-B6 vs KMM372C883CK-6

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