Datasheets
HAF1009(L) by:

40A, 60V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-4

Part Details for HAF1009(L) by Renesas Electronics Corporation

Overview of HAF1009(L) by Renesas Electronics Corporation

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Available Datasheets

Part # Manufacturer Description Datasheet
HAF1009S Renesas Electronics Corporation Silicon P Channel MOS FET Series Power Switching, LDPAK(S)(1), /Embossed Tape
HAF1009-90L-E Renesas Electronics Corporation Thermal Shut Down Functioned MOSFET, LDPAK(L), /Bag

Part Details for HAF1009(L)

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HAF1009(L) Part Data Attributes

HAF1009(L) Renesas Electronics Corporation
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HAF1009(L) Renesas Electronics Corporation 40A, 60V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-4
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Package Description IN-LINE, R-PSIP-T3
Pin Count 4
Reach Compliance Code unknown
Additional Feature BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 40 A
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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