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Memory SRAMs GS8662R09E-250I

Memory
GS8662R09E-250I
GSI Technology
Description: DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1MM PITCH, FPBGA-165

Overview of GS8662R09E-250I by GSI Technology

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Available Datasheets

Part # Manufacturer Description Datasheet
MSP430FG4250IRGZR Texas Instruments 16-Bit Ultra-Low-Power MCU, 16kB Flash, 256B RAM, 16-bit Sigma-Delta A/D, 12-bit D/A, 2 OPAMP, LCD 48-VQFN -40 to 85

CAD Models for GS8662R09E-250I by GSI Technology
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Part Data Attributes for GS8662R09E-250I by GSI Technology
Parametric Data

GS8662R09E-250I
GSI Technology
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
GSI TECHNOLOGY
Part Package Code
BGA
Package Description
LBGA,
Pin Count
165
Reach Compliance Code
unknown
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
0.45 ns
Additional Feature
PIPELINED ARCHITECTURE
JESD-30 Code
R-PBGA-B165
Length
17 mm
Memory Density
75497472 bit
Memory IC Type
DDR SRAM
Memory Width
9
Moisture Sensitivity Level
3
Number of Functions
1
Number of Terminals
165
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
8MX9
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
235
Qualification Status
Not Qualified
Seated Height-Max
1.5 mm
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
15 mm
Want to compare parts?
  1. GS8662R09E-250I
    GSI Technology
    DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1MM PITCH, FPBGA-165
    VS

Alternate Parts for GS8662R09E-250I

This table gives cross-reference parts and alternative options found for GS8662R09E-250I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8662R09E-250I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
GS8662R09E-250 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1MM PITCH, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09E-250
UPD44644094F5-E40-FQ1 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165 NEC Electronics Group GS8662R09E-250I vs UPD44644094F5-E40-FQ1
GS8662R09E-250T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1MM PITCH, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09E-250T
CY7C1528V18-250BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1528V18-250BZI
CY7C1528V18-250BZXI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1528V18-250BZXI
CY7C1528V18-250BZXC DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1528V18-250BZXC
GS8662R09GE-250IT DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09GE-250IT
GS8662R09GE-250T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09GE-250T
GS8662R09GE-250I DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09GE-250I
CY7C1528V18-250BZC DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1528V18-250BZC
Part Number Description Manufacturer Compare
GS8662Q09BGD-167T Standard SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662Q09BGD-167T
CY7C1577KV18-500BZI DDR SRAM, 8MX9, 0.33ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1577KV18-500BZI
CY7C1527AV18-167BZXC DDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1527AV18-167BZXC
CY7C1527V18-250BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1527V18-250BZI
CY7C1528V18-200BZXC DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662R09E-250I vs CY7C1528V18-200BZXC
GS8662R09BGD-167IT Standard SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09BGD-167IT
GS8662R09BGD-250 Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09BGD-250
GS8662Q09BGD-300IT QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662Q09BGD-300IT
GS8662R09GE-250IT DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662R09GE-250IT
GS8662Q09BD-300I QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662R09E-250I vs GS8662Q09BD-300I

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