There are no models available for this part yet.
Overview of GB300AE3 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for GB300AE3 by Microsemi Corporation
Part Data Attributes for GB300AE3 by Microsemi Corporation
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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MICROSEMI CORP
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Package Description
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POST/STUD MOUNT, O-MUPM-D3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.30.00.80
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Additional Feature
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ULTRA FAST
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Case Connection
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ANODE
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Configuration
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SINGLE
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DC Gate Trigger Current-Max
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0.2 mA
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JEDEC-95 Code
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TO-59
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JESD-30 Code
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O-MUPM-D3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Temperature-Max
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125 °C
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Operating Temperature-Min
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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POST/STUD MOUNT
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RMS On-state Current-Max
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9.42 A
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Repetitive Peak Off-state Voltage
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60 V
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Repetitive Peak Reverse Voltage
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60 V
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Surface Mount
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NO
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Terminal Form
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SOLDER LUG
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Terminal Position
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UPPER
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Trigger Device Type
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SCR
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Alternate Parts for GB300AE3
This table gives cross-reference parts and alternative options found for GB300AE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GB300AE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| S106B2 | Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, 3 PIN | Hutson Industries | GB300AE3 vs S106B2 |
| NTE5416 | Silicon Controlled Rectifier, 4.082A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-126, | NTE Electronics Inc | GB300AE3 vs NTE5416 |
| 2N1871E3 | Silicon Controlled Rectifier, 1.9625A I(T)RMS, 60V V(RRM), 1 Element, TO-9, 3 PIN | Microsemi Corporation | GB300AE3 vs 2N1871E3 |
| 2N6402 | Silicon Controlled Rectifier, 16A I(T)RMS, 5000mA I(T), 200V V(DRM), 1 Element, TO-220AB | Loras Industries Inc | GB300AE3 vs 2N6402 |
| 2N6606 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-18, | Central Semiconductor Corp | GB300AE3 vs 2N6606 |
| 2N4170 | Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-64 | Central Semiconductor Corp | GB300AE3 vs 2N4170 |
| TYN058 | 8A, 50V, SCR, TO-220AB | STMicroelectronics | GB300AE3 vs TYN058 |
| S1010LS3 | Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 100V V(DRM), 1 Element, TO-220AB | Loras Industries Inc | GB300AE3 vs S1010LS3 |
| S1010L | Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 100V V(DRM), 1 Element, TO-220AB | Loras Industries Inc | GB300AE3 vs S1010L |
| AD111 | Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-39, 3 PIN | Microsemi Corporation | GB300AE3 vs AD111 |