Part Details for FQI50N06L by Fairchild Semiconductor Corporation
Overview of FQI50N06L by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQI50N06L
FQI50N06L CAD Models
FQI50N06L Part Data Attributes
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FQI50N06L
Fairchild Semiconductor Corporation
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Datasheet
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FQI50N06L
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-262AA | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 990 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 52.4 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 121 W | |
Pulsed Drain Current-Max (IDM) | 210 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQI50N06L
This table gives cross-reference parts and alternative options found for FQI50N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI50N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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50N06G-TND-T | Power Field-Effect Transistor | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06G-TND-T |
50N06L-TND-T | Power Field-Effect Transistor | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06L-TND-T |
50N06G-TND-R | Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06G-TND-R |
50N06L-TQ2-T | Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06L-TQ2-T |
LTP50N06 | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Lite-On Semiconductor Corporation | FQI50N06L vs LTP50N06 |
50N06L-TM3-T | Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06L-TM3-T |
50N06G-TN3-T | Power Field-Effect Transistor | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06G-TN3-T |
50N06G-TQ2-T | Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Unisonic Technologies Co Ltd | FQI50N06L vs 50N06G-TQ2-T |
KMB050N60PU/P | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | FQI50N06L vs KMB050N60PU/P |
IRFZ44AJ69Z | Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQI50N06L vs IRFZ44AJ69Z |