Datasheets
50N06G-TND-R by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN

Part Details for 50N06G-TND-R by Unisonic Technologies Co Ltd

Overview of 50N06G-TND-R by Unisonic Technologies Co Ltd

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Part Details for 50N06G-TND-R

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50N06G-TND-R Part Data Attributes

50N06G-TND-R Unisonic Technologies Co Ltd
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50N06G-TND-R Unisonic Technologies Co Ltd Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 480 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 50N06G-TND-R

This table gives cross-reference parts and alternative options found for 50N06G-TND-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 50N06G-TND-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
50N06G-TND-T Power Field-Effect Transistor Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06G-TND-T
Part Number Description Manufacturer Compare
50N06G-TND-T Power Field-Effect Transistor Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06G-TND-T
50N06L-TND-T Power Field-Effect Transistor Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06L-TND-T
50N06L-TQ2-T Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06L-TQ2-T
LTP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Lite-On Semiconductor Corporation 50N06G-TND-R vs LTP50N06
FQI50N06L Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation 50N06G-TND-R vs FQI50N06L
50N06L-TM3-T Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06L-TM3-T
50N06G-TN3-T Power Field-Effect Transistor Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06G-TN3-T
50N06G-TQ2-T Power Field-Effect Transistor, 50A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Unisonic Technologies Co Ltd 50N06G-TND-R vs 50N06G-TQ2-T
KMB050N60PU/P Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN KEC 50N06G-TND-R vs KMB050N60PU/P
IRFZ44AJ69Z Power Field-Effect Transistor, 50A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation 50N06G-TND-R vs IRFZ44AJ69Z

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