Part Details for FDS8936S by Fairchild Semiconductor Corporation
Overview of FDS8936S by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDS8936S
FDS8936S CAD Models
FDS8936S Part Data Attributes
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FDS8936S
Fairchild Semiconductor Corporation
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Datasheet
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FDS8936S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS8936S
This table gives cross-reference parts and alternative options found for FDS8936S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8936S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7401 | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS8936S vs IRF7401 |
| PHP125-TAPE-7 | TRANSISTOR 2.3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | FDS8936S vs PHP125-TAPE-7 |
| HAT1038RJ | 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDS8936S vs HAT1038RJ |
| AP4405GM | TRANSISTOR 14 A, 30 V, 0.0082 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | FDS8936S vs AP4405GM |
| BSO203SPH | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS8936S vs BSO203SPH |
| IRF7306 | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | FDS8936S vs IRF7306 |
| FDS6975_NL | Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | FDS8936S vs FDS6975_NL |
| IRF7403 | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | FDS8936S vs IRF7403 |
| IRF7706GPBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | International Rectifier | FDS8936S vs IRF7706GPBF |
| AP9620GM | TRANSISTOR 9.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | FDS8936S vs AP9620GM |