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Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96K9886
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Newark | Mosfet, N, So-8, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0125Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Dissipation Pd:2.5W, Rohs Compliant: Yes |Onsemi FDS6690A Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2000 |
|
$0.2440 | Buy Now |
DISTI #
96AC0031
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Newark | Fet 30V 12.5 Mohm So8 Rohs Compliant: Yes |Onsemi FDS6690A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2890 / $0.3220 | Buy Now |
DISTI #
67R2077
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V, Power Dissipation:2.5W Rohs Compliant: Yes |Onsemi FDS6690A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3280 / $0.3290 | Buy Now |
DISTI #
58K8855
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Newark | N Channel Mosfet, 30V, 11A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDS6690A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3680 / $0.8290 | Buy Now |
DISTI #
FDS6690ACT-ND
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DigiKey | MOSFET N-CH 30V 11A 8SOIC Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6804 In Stock |
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$0.2612 / $0.7900 | Buy Now |
DISTI #
FDS6690A
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Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6690A) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.2356 / $0.2812 | Buy Now |
DISTI #
FDS6690A
|
Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6690A) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0 |
|
$0.2356 / $0.2812 | Buy Now |
DISTI #
FDS6690A
|
Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6690A) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Container: Reel | 0 |
|
$0.2356 / $0.2812 | Buy Now |
DISTI #
FDS6690A
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Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6690A) RoHS: Compliant Min Qty: 2778 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12500 Partner Stock |
|
$0.2232 / $0.2664 | Buy Now |
DISTI #
58K8855
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Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 58K8855) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 48 Weeks, 4 Days Container: Ammo Pack | 0 |
|
$0.5100 / $0.8290 | Buy Now |
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FDS6690A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6690A
onsemi
Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOP-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 24 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 96 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 115 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 63 ns | |
Turn-on Time-Max (ton) | 29 ns |
This table gives cross-reference parts and alternative options found for FDS6690A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6690A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS6690A_NL | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | FDS6690A vs FDS6690A_NL |
FDS6690AL99Z | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDS6690A vs FDS6690AL99Z |
FDS6690A-NBNP006 | Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ, SO 8L NB, 2500-REEL | onsemi | FDS6690A vs FDS6690A-NBNP006 |