Datasheets
FDS6679 by:

P-Channel PowerTrench® MOSFET, 30V, -13A, 9mΩ, 2500-REEL

Part Details for FDS6679 by onsemi

Overview of FDS6679 by onsemi

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Price & Stock for FDS6679

Part # Distributor Description Stock Price Buy
DISTI # 29X6697
Newark Mosfet, P Channel, -30V, -13A, Soic-8, Transistor Polarity:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:13A, On Resistance Rds(On):0.0073Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi FDS6679 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
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DISTI # 78K5942
Newark P Channel Mosfet, -30V, 13A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi FDS6679 Min Qty: 272 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
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Part Details for FDS6679

FDS6679 CAD Models

FDS6679 Part Data Attributes:

FDS6679 onsemi
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FDS6679 onsemi P-Channel PowerTrench® MOSFET, 30V, -13A, 9mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOIC-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6679

This table gives cross-reference parts and alternative options found for FDS6679. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6679, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6679 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6679
FDS6679F011 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6679F011
FDS6679D84Z Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6679D84Z
FDS6679_NL Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6679_NL
Part Number Description Manufacturer Compare
STS10PF30L 10mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 STMicroelectronics FDS6679 vs STS10PF30L
SI9431DY Small Signal Field-Effect Transistor, 5.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors FDS6679 vs SI9431DY
NDS8435AL86Z Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6679 vs NDS8435AL86Z
FDS4435BZ Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDS6679 vs FDS4435BZ
FDS6609A Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6609A
SI6423DQ-T1-E3 Small Signal Field-Effect Transistor, 8.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Intertechnologies FDS6679 vs SI6423DQ-T1-E3
FDS6679Z 30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL Fairchild Semiconductor Corporation FDS6679 vs FDS6679Z
FDS4435AL86Z Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6679 vs FDS4435AL86Z
FDS6675_NL Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6679 vs FDS6675_NL
FDS4435BZ_F085 -30V, -8.8A, 20mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL onsemi FDS6679 vs FDS4435BZ_F085

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