Datasheets
FDS6675BZ by:

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

Part Details for FDS6675BZ by Fairchild Semiconductor Corporation

Overview of FDS6675BZ by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDS6675BZ

Part # Distributor Description Stock Price Buy
Bristol Electronics   2117
RFQ
Bristol Electronics   41
RFQ
Quest Components 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 1693
  • 1 $1.1105
  • 91 $0.5553
  • 361 $0.4442
$0.4442 / $1.1105 Buy Now
ComSIT USA -30 V, -11 A, 13 MILLI OHM P-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 2845
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R / MOSFET P-CH 30V 8-SOIC 229631
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for FDS6675BZ

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FDS6675BZ Part Data Attributes

FDS6675BZ Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDS6675BZ Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description ROHS COMPLIANT, SOP-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 500 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6675BZ

This table gives cross-reference parts and alternative options found for FDS6675BZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6675BZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ, 2500-REEL onsemi FDS6675BZ vs FDS6675BZ
Part Number Description Manufacturer Compare
SI6423DQ-T1-GE3 TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix FDS6675BZ vs SI6423DQ-T1-GE3
FDR838PD84Z Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDS6675BZ vs FDR838PD84Z
NDH832P/L99Z 4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDS6675BZ vs NDH832P/L99Z
FDS9435AL99Z Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDS6675BZ vs FDS9435AL99Z
NDH832PL86Z Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDS6675BZ vs NDH832PL86Z
FDS6575F011 Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6675BZ vs FDS6575F011
SI9431DY Small Signal Field-Effect Transistor, 5.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors FDS6675BZ vs SI9431DY
FDS6679ZL86Z Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675BZ vs FDS6679ZL86Z
NDS9400A_NL Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDS6675BZ vs NDS9400A_NL
FDS6675A Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675BZ vs FDS6675A

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