Datasheets
FDS6675 by:

Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ, 2500-REEL

Part Details for FDS6675 by onsemi

Overview of FDS6675 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDS6675

Part # Distributor Description Stock Price Buy
DISTI # 73AK1027
Newark Mosfet, P So-8 Reel 2500 |Onsemi FDS6675 Min Qty: 370 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $1.4000
  • 500 $1.2900
  • 1,000 $1.1900
$1.1900 / $1.4000 Buy Now
Rochester Electronics FDS6675 - Small Signal Field-Effect Transistor, 11A, 30V, P-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 4252
  • 1 $0.9877
  • 25 $0.9679
  • 100 $0.9284
  • 500 $0.8889
  • 1,000 $0.8395
$0.8395 / $0.9877 Buy Now

Part Details for FDS6675

FDS6675 CAD Models

FDS6675 Part Data Attributes:

FDS6675 onsemi
Buy Now Datasheet
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FDS6675 onsemi Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SO-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6675

This table gives cross-reference parts and alternative options found for FDS6675. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6675, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6675 Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675
FDS6675_NL Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675_NL
FDS6675L86Z Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675L86Z
FDS6675S62Z Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675S62Z
FDS6675D84Z Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675D84Z
FDS6675F011 Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6675F011
Part Number Description Manufacturer Compare
SI6423DQ-T1-GE3 TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix FDS6675 vs SI6423DQ-T1-GE3
FDR838PD84Z Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDS6675 vs FDR838PD84Z
NDS9405/S62Z 4300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDS6675 vs NDS9405/S62Z
FDS4435S62Z Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS4435S62Z
NDH832P/L86Z 4200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDS6675 vs NDH832P/L86Z
FDS6575D84Z Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6575D84Z
FDS6679F011 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6679F011
FDW262P_NL Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation FDS6675 vs FDW262P_NL
FDS4435BZ_F085 -30V, -8.8A, 20mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL onsemi FDS6675 vs FDS4435BZ_F085
FDS6679Z_NL Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6675 vs FDS6679Z_NL

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