-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
25M9451
|
Newark | Mosfet Transistor, N Channel, 46 A, 30 V, 0.0077 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDD6690A Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
Bristol Electronics | 3482 |
|
RFQ | ||
|
Flip Electronics | Stock, ship today | 1076 |
|
$0.4700 | RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
FDD6690A
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDD6690A
onsemi
N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.0125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDD6690A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6690A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDD6690A_NL | Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD6690A vs FDD6690A_NL |