FDD6690A vs NTD4913N-35G feature comparison

FDD6690A onsemi

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NTD4913N-35G onsemi

Buy Now Datasheet
Pbfree Code Yes Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI ON SEMICONDUCTOR
Part Package Code DPAK-3 / TO-252-3 3.5 mm IPAK, Straight Lead
Package Description DPAK-3 IN-LINE, R-PSIP-T3
Manufacturer Package Code 369AS 369AD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 180 mJ 22 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 12 A 7.7 A
Drain-source On Resistance-Max 0.0125 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 100 A 132 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 3

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Compare NTD4913N-35G with alternatives