FDD6690A
vs
NTD4913N-35G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
Part Package Code |
DPAK-3 / TO-252-3
|
3.5 mm IPAK, Straight Lead
|
Package Description |
DPAK-3
|
IN-LINE, R-PSIP-T3
|
Manufacturer Package Code |
369AS
|
369AD
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
2 Days
|
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Avalanche Energy Rating (Eas) |
180 mJ
|
22 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
12 A
|
7.7 A
|
Drain-source On Resistance-Max |
0.0125 Ω
|
0.015 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
50 W
|
|
Pulsed Drain Current-Max (IDM) |
100 A
|
132 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
TIN
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pin Count |
|
3
|
|
|
|
Compare FDD6690A with alternatives
Compare NTD4913N-35G with alternatives